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N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247

Mfr Part#:  SCT50N120

Packaging : TUBE 
Std Packaging Qty: 30
Min Order Qty: 1

As low as:  $28.40  (USD) (Buy {0})

In Stock:  No

Fet Type
Drain-to-Source Voltage [Vdss]
1200 V
Drain-Source On Resistance-Max
69 mΩ
Rated Power Dissipation
318 W
Qg Gate Charge
122 nC
  • This part has been identified as a viable alternate to part you are searching for. In most cases it will be a drop in replacement but this is not guaranteed. Please check the technical specification on the datasheet to ensure compatibility before purchasing.

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