IXYS  

IXSN Series 600 Vce 90 A 70 ns t(on) High Speed IGBT w/ Diode - SOT-227B

Mfr Part#: IXSN62N60U1
Mounting Method:  Surface Mount
Package Style:  SOT-227B
Packaging:  TUBE
Std Packaging Qty:  10

 
 
 

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Prices

$19.11 USD (each)
30+ $19.11 (Save 18%)

Availability

Qty in Stock : 0
Factory Stock : N/A
Factory Lead-Time: N/A
Min. Order Qty: 30
Multiple of: 10
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Overview

Product Highlight

  • Turn-on Delay Time: 70 ns
  • Turn-off Delay Time: 300 ns
  • CE Voltage-Max: 600 V
  • Collector Current @ 25C: 90 A
  • Collector Current @ 100C: 50 A

The IXSN62N60U1 is a 600 V High speed Insulated gate bipolar transistor with diode. It has High power density and Short Circuit SOA Capability.

Features:

  • International standard package miniBLOC (ISOTOP) compatible
  • Aluminium-nitride isolation
    • High power dissipation
  • Isolation voltage 3000 V~
  • Low VCE(sat)
    • For minimum on-state conduction losses
  • Fast Recovery Epitaxial Diode
    • Short trr and IRM
  • Low collector-to-case capacitance (< 50 pF)
    • Reducesd RFI
  • Low package inductance (< 10 nH)
    • Easy to drive and to protect

Advantages:

  • Space savings
  • Easy to mount with 2 screws
  • High power density

Applications:

  • AC motor speed control
  • DC servo and robot drives
  • DC choppers
  • Uninterruptible power supplies (UPS)
  • Switch-mode and resonant-mode power supplies

View the Available IXSN Series of IGBT Transistors

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For more information, please call 1-800-675-1619

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