EVERSPIN TECHNOLOGIES  

MR4A16B Series 1 M x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP-54

Mfr Part#: MR4A16BCYS35
Mounting Method:  Surface Mount
Package Style:  TSOP II-54
Packaging:  TRAY
Std Packaging Qty:  108

 
 

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$26.18 USD (each)
1 - 14 $26.18
15+ $24.66 (Save 6%)

Availability

Qty in Stock : 566
On Order :
3,776
Min. Order Qty: 1
Multiple of: 1
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Overview

Product Highlight

  • Memory Density: 16 Mb
  • Interface Type: Parallel
  • Memory Organization: 1 M x 16
  • Supply Voltage-Nom: 3 to 3.6 V
  • Access Time-Max: 35 ns
  • Temperature Range: -40 to +85 °C

The MR4A16BCYS35 is a magneto resistive random access memory (MRAM) organized as 1,048,576 words of 16 bits.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. It is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

Features:

  • +3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Unlimited read & write endurance
  • Data always non-volatile for >20 years at temperature
  • RoHS-compliant small footprint BGA and TSOP2 package
  • AEC-Q100 Grade 1 option in TSOP2 package

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
  • Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs

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For more information, please call 1-800-675-1619

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