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940 nm 100 mA ±25° Through Hole High Power Infrared Emitting Diode - T-1

Mfr Part#: TSAL4400
Mounting Method:  Through Hole
Package Style:  T-1
Packaging:  BOX
Std Packaging Qty:  1,000

 
 

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Prices

$0.1120 USD (each)
100 - 2999 $0.1120
3000+ $0.1060 (Save 5%)

Availability

Qty in Stock : 293,256
On Order :
215,000
Min. Order Qty: 100
Multiple of: 1
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Overview

Product Highlight

  • Wavelength: 940 nm
  • Angle of Half Intensity: ±25 °
  • Intensity: 30 mW/cm2
  • Forward (Drive) Current: 100 mA
  • Forward Voltage: 1.35 V

The TSAL4400 is a High power infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

Features:

  • Package type: leaded
  • Package form: T-1
  • Dimensions (in mm): Ø 3
  • Peak wavelength: λp = 940 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 25°
  • Low forward voltage
  • Suitable for high pulse current operation
  • Good spectral matching with Si photodetectors
  • Package matches with detector TEFT4300
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:

  • Infrared remote control units
  • Free air transmission systems
  • Infrared source for optical counters and card readers

View the Available Infrared Emitting Diodes

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For more information, please call 1-800-675-1619

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