875 nm 100 mA ±20° Through Hole Infrared Emitting Diode - T-1 BAG

Mfr Part#: TSHA4400
Mounting Method:  Through Hole
Package Style:  T-1
Packaging:  BAG
Std Packaging Qty:  5,000



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$0.1410 USD (each)
5000+ $0.1410


Qty in Stock : 0
Factory Stock : 5,000
Factory Lead-Time: 8 Weeks
Min. Order Qty: 5,000
Multiple of: 5,000
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Product Highlight

  • Wavelength: 875 nm
  • Angle of Half Intensity: ±20 °
  • Intensity: 20 mW/cm2
  • Forward (Drive) Current: 100 mA
  • Forward Voltage: 1.5 V
The TSHA4400 is a infrared emitting diode. It consist of 875 nm wavelength in GaAlAs technology, molded in a clear, untinted plastic package.


  • Package type: leaded
  • Package form: T-1
  • Dimensions (in mm): Ø 3
  • Peak wavelength: λp = 875 nm
  • High reliability
  • Angle of half intensity: ϕ = ± 20°
  • Low forward voltage
  • Suitable for high pulse current operation
  • Good spectral matching with Si photodetectors
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC


  • Infrared remote control and free air data transmission systems with comfortable radiation angle
  • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

View the Available Infrared Emitting Diodes

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