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950 nm 100 mA ±22° Through Hole Infrared Emitting Diode - T-1 3/4 BOX

Mfr Part#: TSUS5400
Mounting Method:  Through Hole
Package Style:  T-1 3/4
Packaging:  BOX
Std Packaging Qty:  4,000

 
 

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Prices

$0.1090 USD (each)
4000 - 7999 $0.1090
8000+ $0.1080 (Save 1%)

Availability

Qty in Stock : 0
Factory Stock : 0
Factory Lead-Time: 8 Weeks
Min. Order Qty: 4,000
Multiple of: 4,000
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Overview

Product Highlight

  • Wavelength: 950 nm
  • Angle of Half Intensity: ±22 °
  • Intensity: 14 mW/cm2
  • Forward (Drive) Current: 150 mA
  • Forward Voltage: 1.3 V

The TSUS5400 is a 950 nm infrared emitting diode. It uses GaAs technology molded in a blue-gray tinted plastic package.

Features:

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Leads with stand-off
  • Peak wavelength: λp = 950 nm
  • High reliability
  • Angle of half intensity: ϕ = ± 22°
  • Low forward voltage
  • Suitable for high pulse current operation
  • Good spectral matching with Si photodetectors
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:

  • Infrared remote control and free air transmission systems with low forward voltage and small package requirements
  • Emitter in transmissive sensors
  • Emitter in reflective sensors

View the Available Infrared Emitting Diodes

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For more information, please call 1-800-675-1619

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