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MJD Series 100 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-252-3

Mfr Part#: MJD243G
Mounting Method:  Tab Mount
Package Style:  TO-252-3 (DPAK)
Packaging:  TUBE
Std Packaging Qty:  75

 
 

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Prices

$0.3000 USD (each)
40 - 749 $0.3000
750+ $0.2833 (Save 6%)

Availability

Qty in Stock : 510
On Order :
3,300
Min. Order Qty: 40
Multiple of: 1
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Overview

Product Highlight

  • Polarity: NPN
  • Power Dissipation-Tot: 1.4 W
  • CE Voltage-Max: 100 V
  • Collector Current @ 100C: 4 A
  • DC Current Gain-Min: 40

Designed for low voltage, low-power, high-gain audio amplifier applications.

Features:

  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 100 Vdc (Min) @ IC
    • = 10 mAdc
  • High DC Current Gain
    • hFE = 40 (Min) @ IC
      = 200 mAdc
      = 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves (“-1” Suffix)
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 0.3 Vdc (Max) @ IC
      = 500 mAdc
      = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain - Bandwidth Product
    • fT = 40 MHz (Min) @ IC
      = 100 mAdc
  • Annular Construction for Low Leakage
  • ICBO = 100 nAdc @ Rated VCB
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
  • These are Pb-Free Packages

Learn more about the MJD2 family of Bipolar Transistors

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