ON SEMICONDUCTOR  

2N6045 Series 100 V 8 A Medium-Power Complementary Silicon Transistor - TO-220AB

Mfr Part#: 2N6045G
Mounting Method:  Through Hole
Package Style:  TO-220-3 (TO-220AB)
Packaging:  TUBE
Std Packaging Qty:  50

 
 

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Prices

$0.2650 USD (each)
30 - 1249 $0.2650
1250+ $0.2500 (Save 6%)

Availability

Qty in Stock : 2,650
On Order :
11,150
Min. Order Qty: 30
Multiple of: 1
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Overview

Product Highlight

  • Type: Darlington
  • Polarity: NPN
  • CE Voltage-Max: 100 V
  • Collector Current Max: 8 A
  • Power Dissipation-Tot: 75 W
  • Collector - Base Voltage: 100 V
  • Collector - Emitter Saturation Voltage: 4 V
  • Emitter - Base Voltage: 5 V
  • DC Current Gain-Min: 100
  • Configuration: Single
  • Collector - Current Cutoff: 20 µA
  • Operating Temp Range: -65 to +150 °C

On Semi’s 2N6045G is an 8A, 100V Darlington NPN transistor.  The 2N6045G is a  through hole device, available in a 3-pin, TO-220, 221A-90 Case outline offered on a rail.  The 2N6045G is a complementary silicon power Darlington transistor.

Features:

  • High DC Current Gain
    • hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    • VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
    • VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
    • VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44
    • VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available

Learn more about the 2N60 family of Transistors

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