INTERNATIONAL RECTIFIER  

Single N-Channel 25 V 2.8 W 35 nC Hexfet Power Mosfet Surface Mount - DirectFET

Mfr Part#: IRF6795MTR1PBF
Mounting Method:  Surface Mount
Package Style:  DIRECTFET
Packaging:  REEL
Std Packaging Qty:  1,000

 
 

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$1.25 USD (each)
1000+ $1.25

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Overview

Product Highlight

  • Channel Type: N-Channel
  • Drain-to-Source Voltage [Vdss]: 25 V
  • Drain-Source On Resistance-Max: 1.8 mΩ
  • Qg Gate Charge: 35 nC
  • Rated Power Dissipation: 2.8 W

25V DirectFET® Chipset Optimized for High Frequency, High Efficiency DC-to-DC Applications

This new 25V chipset combines IR’s latest generation HEXFET® MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8 and with slim 0.7mm profile. The new IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.

"The IRF6710S2 control MOSFET features ultra-low Rg and charge, and, when co-designed with the IRF6795M and IRF6797M synchronous MOSFETs which include integrated Schottky, provides a solution for high frequency, high efficiency DC-to-DC converters that delivers excellent performance over the entire load range," said Vijay Viswanathan, IR’s product marketing engineer for Enterprise Power Products.

The IRF6710S2 is ideally suited as a control MOSFET due to the device’s very low gate resistance of 0.3Ω and very low Miller charge (Qgd) of 3.0 nC which significantly reduces switching losses.

The IRF6795M and IRF6797M feature extremely low RDS(on) to significantly reduce conduction losses, while the integrated Schottky reduces diode conduction losses and reverse recovery losses, making these devices well suited for high current synchronous MOSFET circuits. The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.

Features:

  • RoHS-compliant containing no lead and bromide
  • Integrated monolithic Schottky diode
  • Low profile (<0.7mm)
  • Dual sided cooling compatible
  • Ultra low package inductance
  • Optimized for high frequency switching
  • Ideal for CPU core DC-to-DC converters
  • Optimized for control FET Application
  • Low conduction and switching losses
  • Compatible with existing surface mount techniques
  • 100% Rg tested

Applications

  • Point-of-load (POL) converter designs
  • Servers
  • High-end desktop and notebook computer applications

IRF6795MTR1PBF - 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 Package Rated at 12A Optimized with Low-on Resistance

See Datasheet for complete details.

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