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N-Channel 200 V 0.17 Ohm Surface Mount Mosfet - D2PAK-3

Mfr Part#: FQB19N20CTM
Mounting Method:  Surface Mount
Package Style:  TO-263-3 (D2PAK)
Packaging:  REEL
Std Packaging Qty:  800

 
 

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Prices

$0.4250 USD (each)
1600+ $0.4250 (Save 3%)

Availability

Qty in Stock : 0
Factory Stock : N/A
Factory Lead-Time: N/A
Min. Order Qty: 1,600
Multiple of: 800
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Overview

Product Highlight

  • Fet Type: N-Channel
  • Drain-to-Source Voltage [Vdss]: 200 V
  • Drain-Source On Resistance-Max: 0.17 Ω
  • Rated Power Dissipation: 139 W
  • Qg Gate Charge: 40.5 nC

The FQB19N20C is a 200 V 0.17 Ω N-Channel enhancement mode power field effect transistors are produced using proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 19.0 A, 200 V
  • RDS(on) = 0.17 Ω@VGS = 10 V
  • Low gate charge (typical 40.5 nC)
  • Low Crss (typical 85 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS Compliant 

Applications:

  • High efficiency S.M.P.S
  • Active power factor correction
  • Electronic lamp ballasts

View the complete family of N-channel mosfets

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For more information, please call 1-800-675-1619

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