INFINEON  

Dual N-Channel 20 V 0.1 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

Mfr Part#: IRF7101TRPBF
Mounting Method:  Surface Mount
Package Style:  SOIC-8
Packaging:  REEL
Std Packaging Qty:  4,000

 
 

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Prices

$0.2600 USD (each)
4000+ $0.2600

Availability

Qty in Stock : 0
Factory Stock : N/A
Factory Lead-Time: N/A
Min. Order Qty: 4,000
Multiple of: 4,000
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Overview

Product Highlight

  • Fet Type: Dual N-Channel
  • Drain-to-Source Voltage [Vdss]: 20 V
  • Drain-Source On Resistance-Max: 0.1 Ω
  • Rated Power Dissipation: 2 W
  • Qg Gate Charge: 15 nC

This product cannot ship to Europe.

The IRF7101TRPBF is a Dual N-Channel Hexfet Power Mosfet, available in surface mount SOIC-8 package.

It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features:

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dual N-Channel MOSFET
  • Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free

View the available IRF7 series of N-Channel Power Mosfets

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For more information, please call 1-800-675-1619

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