The new family of MOSFETs utilizes IR’s proven silicon technology to deliver benchmark on-state resistance (RDS(on)) and improved switching performance. The devices’ low conduction losses improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.

The new MOSFETs are also offered in a Power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration.

Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5x6mm and 3x3mm package optimized for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered as Halogen free.

The IRFH3702TR2PBF is an N-channel, 30V MOSFET with a current rating of 16 Amps. The device has a max rating of 7.1 Mohms, and is offered in a PQFN 3X3 package