INFINEON  

Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3

Mfr Part#: IRLB8721PBF
Mounting Method:  Through Hole
Package Style:  TO-220-3 (TO-220AB)
Packaging:  TUBE
Std Packaging Qty:  50

 
 

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Prices

$0.3600 USD (each)
30 - 299 $0.3600
300 - 1749 $0.3350 (Save 7%)
1750+ $0.3050 (Save 15%)

Availability

Qty in Stock : 0
On Order :
1,010
Min. Order Qty: 30
Multiple of: 1
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Overview

Product Highlight

  • Fet Type: N-Ch
  • No of Channels: 1
  • Drain-to-Source Voltage [Vdss]: 30 V
  • Drain-Source On Resistance-Max: 8.7 mΩ
  • Rated Power Dissipation: 65 W
  • Qg Gate Charge: 13 nC
  • Gate-Source Voltage-Max [Vgss]: 20 V
  • Drain Current: 62 A
  • Turn-on Delay Time: 9.1 ns
  • Turn-off Delay Time: 9 ns
  • Rise Time: 93 ns
  • Fall Time: 17 ns
  • Operating Temp Range: -55 to +175 °C
  • Gate Source Threshold: 2.35 V
  • Technology: Si
  • Height - Max: 9.02 mm
  • Length: 10.67 mm
  • Input Capacitance: 1077 pF

This product cannot ship to Europe.

The IRLB87 MOSFET series recently release by International Rectifier are industrial-qualified 30V TO-220 HEXFET® power MOSFETs with extremely low gate charge (Qg) for applications including Uninterruptable Power Supply (UPS) inverters, low voltage power tools, ORing applications and netcom and server power supplies.

These robust MOSFETs feature IR’s latest generation Trench technology and offer very low on-state resistance (RDS(on)) to reduce thermal dissipation. In addition, the new devices’ ultra low gate

The devices are qualified to industrial grade and moisture sensitivity level 1 (MSL1). The 30V MOSFETs are available in a TO-220 package, are offered lead free and are RoHS compliant.

The IRLB8721PBF is a 30V 62A 9 MOHM HEXFET that comes in a TO-220 package, and is lead-free.

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