Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3

Mfr Part#: IRF9530NPBF
Mounting Method:  Through Hole
Package Style:  TO-220-3 (TO-220AB)
Packaging:  TUBE
Std Packaging Qty:  50



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$0.4000 USD (each)
25 - 299 $0.4000
300 - 1749 $0.3750 (Save 6%)
1750+ $0.3350 (Save 16%)


Qty in Stock :   5,950
On Order :
Min. Order Qty: 25
Multiple of: 1
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Product Highlight

  • Fet Type: P-Ch
  • No of Channels: 1
  • Drain-to-Source Voltage [Vdss]: 100 V
  • Drain-Source On Resistance-Max: 0.2 Ω
  • Rated Power Dissipation: 79 W
  • Qg Gate Charge: 58 nC
  • Gate-Source Voltage-Max [Vgss]: 20 V
  • Drain Current: 14 A
  • Turn-on Delay Time: 15 ns
  • Turn-off Delay Time: 45 ns
  • Rise Time: 58 ns
  • Fall Time: 46 ns
  • Operating Temp Range: -55 to +175 °C
  • Gate Source Threshold: 4 V
  • Technology: Si
  • Height - Max: 8.77 mm
  • Length: 10.54 mm
  • Input Capacitance: 760 pF

This product cannot ship to Europe.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

The IRF9530NPBF is a Single P-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

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