Ramtron nonvolatile state savers also provide continuous access to nonvolatile system settings without performing a memory read operation, as well as enable storage of signals that may change frequently and without notice.

Furthermore, Ramtron Nonvolatile State Savers allow the nonvolatile storage of a system setting without the system overhead of a serial memory.

All Ramtron F-RAM products have three distinct properties that differentiate them from other nonvolatile memory technologies: 

Fast write speed - F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.

High endurance - F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.

Low power consumption - F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.