MR0A16 Series 64 K x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

Mfr Part#: MR0A16ACYS35
Mounting Method:  Surface Mount
Package Style:  TSOP II-44
Packaging:  TRAY
Std Packaging Qty:  135



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Product Highlight

  • Memory Density: 1 Mb
  • Interface Type: Parallel
  • Memory Organization: 64 K x 16
  • Supply Voltage-Nom: 3.3 V
  • Access Time-Max: 35 ns
  • Temperature Range: -40 to +85 °C

The MR0A16A is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR0A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.


• Fast 35 ns Read/Write Cycle
• SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20-years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, reliability, and liability issues
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Extended Temperatures
• RoHS-Compliant SRAM-compatible TSOPII Package
• RoHS-Compliant SRAM-compatible BGA Package Shrinks Board Area by Three Times

MR0A16 Series 64 K x 16 Bit 3.3 V 35 ns Asynch Parallel MRAM Memory - TSOPII-44

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