MR2A08 Series 512 K x 8 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

Mfr Part#: MR2A08AYS35
Mounting Method:  Surface Mount
Package Style:  TSOP II-44
Packaging:  TRAY
Std Packaging Qty:  135



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$16.06 USD (each)
135+ $16.06 (Save 6%)


Qty in Stock : 0
Factory Stock : N/A
Factory Lead-Time: N/A
Min. Order Qty: 135
Multiple of: 135
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Product Highlight

  • Memory Density: 4 Mb
  • Interface Type: Parallel
  • Memory Organization: 512 K x 8
  • Supply Voltage-Nom: 3.3 V
  • Access Time-Max: 35 ns
  • Temperature Range: 0 to 70 °C
The MR2A08AYS35 is a magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. It is available small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. and is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.


  • Fast 35ns Read/Write Cycle
  • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
  • Unlimited Read & Write Endurance
  • Data Always Non-volatile for >20 years at Temperature
  • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
  • Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, improving reliability
  • 3.3 Volt Power Supply
  • Automatic Data Protection on Power Loss
  • Commercial, Industrial, Automotive Temperatures
  • RoHS-Compliant SRAM TSOP2 Package
  • AEC-Q100 Grade 1 Qualified

View the available MR2A08A series of MRAMs

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