890 nm 50° GaAIAs Plastic Infrared Emitting Diode

Mfr Part#: OP298A
Mounting Method:  Through Hole
Packaging:  BAG
Std Packaging Qty:  100



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$0.5150 USD (each)
20 - 749 $0.5150
750+ $0.4800 (Save 7%)


Qty in Stock : 231
Factory Stock : N/A
Factory Lead-Time: N/A
Min. Order Qty: 20
Multiple of: 1
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Product Highlight

  • Wavelength: 890 nm
  • Angle of Half Intensity: ±25 °
  • Intensity: 3 mW/cm2

The OP298A is a gallium aluminum arsenide infrared Light Emitting Diode (LED). That is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistor.

It has an included emission angle of 25°. The Cathode Lead length is 0.06” (1.52 mm) shorter than the Anode Lead. These devices, which come in a variety of power ranges offering a low cost replacement for TO-18 or TO-46 hermetic packages.


  • Choice of narrow or wide irradiance pattern
  • Choice of power ranges
  • Choice of T-1¾, TO-18 or T-46 package
  • Higher power output than GaAs at equivalent LEDs


  • Non-contact reflective object sensor
  • Assembly line automation
  • Machine automation
  • Machine safety
  • End of travel sensor
  • Door sensor
  • Battery-operated applications

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