VISHAY  

870 nm 100 mA ±22° Through Hole High Speed Infrared Emitting Diode - T-1 3/4

Mfr Part#: TSFF5210
Mounting Method:  Through Hole
Package Style:  T-1 3/4
Packaging:  BAG
Std Packaging Qty:  1,000

 
 

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Prices

$0.3850 USD (each)
30 - 999 $0.3850
1000+ $0.3650 (Save 5%)

Availability

Qty in Stock : 6,430
On Order :
4,000
Min. Order Qty: 30
Multiple of: 1
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Overview

Product Highlight

  • Wavelength: 870 nm
  • Angle of Half Intensity: ±10 °
  • Intensity: 180 mW/sr
  • Forward (Drive) Current: 100 mA
  • Forward Voltage: 1.5 V
The TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. It has an Operating temperature ranges b/w -40 °C to 85 °C.

Features:

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Leads with stand-off
  • Peak wavelength: λp = 870 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 10°
  • Low forward voltage
  • Suitable for high pulse current operation
  • High modulation bandwidth: fc = 24 MHz
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Applications:

  • Infrared video data transmission between camcorder and TV set
  • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
  • Smoke-automatic fire detectors

View the List of available TSFF Series of Infrared Emitter

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For more information, please call 1-800-675-1619

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