The Ramtron F-RAM-based Nonvolatile State Saver devices save the state of signals on demand and automatically restore signals to their correct state upon power up.

Ramtron nonvolatile state savers also provide continuous access to nonvolatile system settings without performing a memory read operation, as well as enable storage of signals that may change frequently and without notice.

Furthermore, Ramtron Nonvolatile State Savers allow the nonvolatile storage of a system setting without the system overhead of a serial memory.

All Ramtron F-RAM products have three distinct properties that differentiate them from other nonvolatile memory technologies: 

Fast write speed - F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.

High endurance - F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.

Low power consumption - F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.