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Manufacturer Part #
SCT020W120G3-4AG
1200 V 100 A 28 mOhm Single N-Channel Silicon Carbide Power MOSFET - HiP247-4
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCT020W120G3-4AG - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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STMicroelectronics SCT020W120G3-4AG - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 100A |
| Input Capacitance: | 3465pF |
| Power Dissipation: | 541W |
| Operating Temp Range: | -55°C to +200°C |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
30+
$15.76
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Mounting Method:
Through Hole