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Infineon | IGB15N65S5ATMA1

Manufacturer Part #

IGB15N65S5ATMA1

650V,15A, PG-TO263-3-2

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2308
Product Specification Section
Infineon IGB15N65S5ATMA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 35A
Power Dissipation-Tot: 105W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 60A
Collector - Emitter Saturation Voltage: 1.35V
Turn-on Delay Time: 12ns
Turn-off Delay Time: 117ns
Qg Gate Charge: 38nC
Leakage Current: 50µA
Input Capacitance: 930pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$640.00
USD
Quantity
Unit Price
1,000
$0.64
2,000
$0.63
3,000
$0.625
5,000
$0.62
10,000+
$0.605
Product Variant Information section