INFINEON  

Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3

Mfr Part#: IRF3205PBF
Mounting Method:  Through Hole
Package Style:  TO-220-3 (TO-220AB)
Packaging:  TUBE
Std Packaging Qty:  50

 
 

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Prices

$0.6600 USD (each)
20 - 499 $0.6600
500+ $0.6100 (Save 8%)

Availability

Qty in Stock : 18,766
On Order :
631,200
Min. Order Qty: 20
Multiple of: 1
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Overview

Product Highlight

  • Fet Type: N-Ch
  • No of Channels: 1
  • Drain-to-Source Voltage [Vdss]: 55 V
  • Drain-Source On Resistance-Max: 8 mΩ
  • Rated Power Dissipation: 200 W
  • Qg Gate Charge: 146 nC
  • Gate-Source Voltage-Max [Vgss]: 20 V
  • Drain Current: 110 A
  • Turn-on Delay Time: 14 ns
  • Turn-off Delay Time: 50 ns
  • Rise Time: 101 ns
  • Fall Time: 65 ns
  • Operating Temp Range: -55 to +175 °C
  • Gate Source Threshold: 4 V
  • Technology: Advanced Process Technology
  • Height - Max: 4.83 mm
  • Length: 10.67 mm
  • Input Capacitance: 3247 pF

This product cannot ship to Europe.

The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier.  The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free.  For more information, please see the datasheet above.

 

The IRF3205PBF comes in a TO-220 package, and is lead free as indicated by the PBF.

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