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Product Variant Information section
Product Specification Section
Pricing Section

Stock : 0

Sur commande : 0
Stock d'usine :Stock d'usine : 0
Délai d'usine : N/A
Commande minimale : 2 500
Multiples de : 2 500
Quantité Prix Internet
2 500+ $0.425
Total :

1 062,50 $

USD
Attributs
Attributes Table
Configuration Half Bridge
No of Outputs Dual
Output Current 600mA
Supply Voltage-Max 20V
Rated Power Dissipation 0.625W
Quiescent Current 100µA
Turn-off Delay Time 680ns
Turn-on Delay Time 150ns
Rise Time 70ns
Fall Time 35ns
Operating Temp Range -40°C to +125°C
Fonctionnalités et applications

The new DGD2003S8, DGD2005S8 and DGD2012S8 are 200V gate-driver ICs for driving two external N-channel MOSFETs in a half-bridge configuration.

These dual-channel MOSFET gate drivers are used to provide the switching signal to high-voltage MOSFETs, to switch them fast and efficiently.

These Diodes devices will be used with high-voltage MOSFETs in power supplies and in motor power stages.

Applications:

  • Power tools
  • Garden tools
  • Home appliances
  • Robotics
  • Drones
  • Small electric vehicles
  • Consumer devices
  • Industrial equipment

Features:

  • Dead time and matched delays to eliminate shoot-through
  • Schmitt-triggered inputs
  • Resistant to negative transient voltages
  • Under-voltage lock-out for high-side and low-side drivers

Benefits:

The DGD2003S8, DGD2005S8 and DGD2012S8 are supplied in a standard SO-8 package for easy assembly in automated production processes.