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Référence fabricant

DGD2012S8-13

DGD2012 Series 20 V 20 mA SMT High-Side & Low-Side Gate Driver - SOIC-8

Nom du fabricant: Diodes Incorporated
Emballage standard:
Product Variant Information section
Code de date: 1905
Product Specification Section
Caractéristiques techniques
Attributes Table
Configuration: Half Bridge
No of Outputs: Dual
Output Current: 20mA
Supply Voltage-Max: 20V
Rated Power Dissipation: 0.625W
Quiescent Current: 150µA
Turn-off Delay Time: 270ns
Turn-on Delay Time: 330ns
Rise Time: 40ns
Fall Time: 20ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The new DGD2003S8, DGD2005S8 and DGD2012S8 are 200V gate-driver ICs for driving two external N-channel MOSFETs in a half-bridge configuration.

These dual-channel MOSFET gate drivers are used to provide the switching signal to high-voltage MOSFETs, to switch them fast and efficiently.

These Diodes devices will be used with high-voltage MOSFETs in power supplies and in motor power stages.

Applications:

  • Power tools
  • Garden tools
  • Home appliances
  • Robotics
  • Drones
  • Small electric vehicles
  • Consumer devices
  • Industrial equipment

Features:

  • Dead time and matched delays to eliminate shoot-through
  • Schmitt-triggered inputs
  • Resistant to negative transient voltages
  • Under-voltage lock-out for high-side and low-side drivers

Benefits:

The DGD2003S8, DGD2005S8 and DGD2012S8 are supplied in a standard SO-8 package for easy assembly in automated production processes.

Pricing Section
Stock
0
Commande minimale :
2 500
Multiples de :
2 500
Sur commande :
0
Stock d'usine :Stock d'usine :
5 000
Délai d'usine :
5-10 Jours
Total 
1 375,00 $
USD
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Des droits de douane peuvent s’appliquer en cas d’expédition vers les États-Unis. Une estimation des droits tarifaires sera dans ce cas calculée au moment du paiement.
Quantité
Prix Internet
2 500+
$0.55
Product Variant Information section