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Référence fabricant

IGLD60R070D1AUMA1

IGLD60R070D1: 600 V 15A CoolGaN™ Enhancement-Mode Power Transistor - PG-LSON-8-1

Nom du fabricant: Infineon
Emballage standard:
Code de date: 1849
Product Specification Section
Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 114W
Qg Gate Charge: 5.8nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 15A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 15ns
Rise Time: 9ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Technology: GaN
Input Capacitance: 380pF
Style d'emballage :  PG-LSON-8-1
Méthode de montage : Surface Mount
Fonctionnalités et applications

Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices

APPLICATIONS
• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment

FEATURES
• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled

Pricing Section
Stock:
5
Commande minimale :
1
Multiples de :
1
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
N/A
Total 
28,12 $
USD
Quantité
Prix Internet
1
$28.12
50
$22.34
100
$21.44
500
$19.50
1 500+
$18.28