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Référence fabricant

IGT60R190D1SATMA1

IGT60R190D1S: 600 V 12.5A CoolGaN™ Enhancement-Mode Power Transistor-PG-HSOF-8-3

Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 1709
Product Specification Section
Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 55.5W
Qg Gate Charge: 3.2nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 12.5A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 12ns
Rise Time: 5ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Technology: GaN
Input Capacitance: 157pF
Style d'emballage :  PG-HSOF-8-3
Méthode de montage : Surface Mount
Fonctionnalités et applications

Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices

APPLICATIONS
• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment

FEATURES
• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled

Pricing Section
Stock
0
Commande minimale :
2 000
Multiples de :
2 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
N/A
Total 
16 000,00 $
USD
Quantité
Prix Internet
2 000+
$8.00
Product Variant Information section