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Product Variant Information section
Product Specification Section
Pricing Section

Stock : 10

Sur commande : 0
Stock d'usine :Stock d'usine : 0
Délai d'usine : N/A
Commande minimale : 1
Multiples de : 1
Quantité Prix Internet
1 $15.38
100 $11.54
250 $10.90
500 $10.44
1 000+ $10.00
Total :

15,38 $

Attributes Table
Fet Type N-Ch
No of Channels 1
Drain-to-Source Voltage [Vdss] 600V
Drain-Source On Resistance-Max 190mΩ
Rated Power Dissipation 55.5W
Qg Gate Charge 3.2nC
Gate-Source Voltage-Max [Vgss] 10V
Drain Current 12.5A
Turn-on Delay Time 11ns
Turn-off Delay Time 12ns
Rise Time 5ns
Fall Time 12ns
Operating Temp Range -55°C to +150°C
Gate Source Threshold 0.9V
Technology GaN
Input Capacitance 157pF
Fonctionnalités et applications

Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices

• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment

• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled