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FM24V Series 1 Mb (128 K x 8) 3 V 450 ns I2C/2-Wire F-RAM Memory - SOIC-8

Nom du fabricant: Cypress
Emballage standard:
Product Variant Information section
Code de date: 1743
Product Specification Section
Caractéristiques techniques
Attributes Table
FRAM Type: Non Volatile
Memory Density: 1Mb
Interface Type: I2C/2-Wire
Memory Organization: 128 K x 8
Supply Voltage-Nom: 2V to 3.6V
Access Time-Max: 450ns
Temperature Range: -40°C to +85°C
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

F-RAM products combine the nonvolatile data storage capability of ROM with the benefits of RAM, which include a high number of read and write cycles, high speed read and write cycles, and low power consumption.

Ramtron's F-RAM product line features various interfaces and densities, which include industry-standard serial and parallel interfaces; industry standard package types; and 4-kilobit, 16-kilobit, 64-kilobit, 256-kilobit, 1-megabit, 2-megabit, and 4-megabit densities.
All Ramtron F-RAM products have three distinct properties that differentiate them from other nonvolatile memory technologies: 

Fast write speed - F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.

High endurance - F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.

Low power consumption - F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.

Key Features

  • 64K x 8-bit (FM24V05) and 128K x 8-bit (FM24V10) memory arrays
  • Two-wire (I2C) protocol
  • Fast access, NoDelay™ writes
  • Virtually unlimited read/write cycles and low-power consumption
  • The FM24V05 and FM24V10 support up to 3.4MHz bus speed, which represents a threefold increase in clock speed as compared to previous I2C serial F-RAM devices
  • Drop-in replacement for 512Kb and 1Mb serial Flash and serial EEPROM memories
  • Active current <150μA (typical at 100Kkz), 90μA in standby and 5μA during sleep mode
  • Low voltage, low power operation of 2.0V-3.6V
  • Data retention for over 10 years


  • Industrial controls
  • Metering
  • Medical
  • Military
  • Gaming
  • Computing applications
Organized as 131,072 x 8 bits, the 1 M-bit Ferroelectric Nonvolatile RAM FM24V10-G provides reliable data retention for 10 years.
Pricing Section
3 114
Commande minimale :
Multiples de :
Sur commande :
Stock d'usine :Stock d'usine :
Délai d'usine :
5-10 Jours
11,74 $
Prix Internet
Product Variant Information section