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Référence fabricant

FM25V05-G

FM25V05 Series 512 Kb (64 K x 8) 3V Surface Mount Serial F-RAM Memory - SOIC-8

Nom du fabricant: Cypress
Emballage standard:
Product Variant Information section
Code de date: 1931
Product Specification Section
Caractéristiques techniques
Attributes Table
FRAM Type: Non Volatile
Memory Density: 512kb
Interface Type: SPI
Memory Organization: 64 K x 8
Supply Voltage-Nom: 2V to 3.6V
Temperature Range: -40°C to +85°C
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

F-RAM products combine the nonvolatile data storage capability of ROM with the benefits of RAM, which include a high number of read and write cycles, high speed read and write cycles, and low power consumption.

Ramtron's F-RAM product line features various interfaces and densities, which include industry-standard serial and parallel interfaces; industry standard package types; and 4-kilobit, 16-kilobit, 64-kilobit, 256-kilobit, 1-megabit, 2-megabit, and 4-megabit densities.
 
All Ramtron F-RAM products have three distinct properties that differentiate them from other nonvolatile memory technologies: 

Fast write speed - F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes nonvolatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds, essential in applications like auto safety systems.

High endurance - F-RAM offers virtually unlimited write endurance, which means it doesn’t wear out like other nonvolatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 1E5 cycles, making them unsuitable for high-endurance applications.

Low power consumption - F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, or even less on more advanced processes.

Key Features 

  • 512K bit Ferroelectric Nonvolatile RAM
        -
    Organized as 64K x 8 bits
        -
    High Endurance 100 Trillion (1014) Read/Writes
        -
    10 Year Data Retention
        -
    NoDelay™ Writes
        -
    Advanced High-Reliability Ferroelectric Process
  • Very Fast Serial Peripheral Interface - SPI
        -
    Up to 40 MHz Frequency
        -Direct Hardware Replacement for Serial Flash
        -
    SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
  • Write Protection Scheme
        -
    Hardware Protection
        -
    Software Protection
  • Device ID and Serial Number
        -
    Device ID reads out Manufacturer ID & Part ID
        -
    Unique Serial Number (FM25VN05)
  • Low Voltage, Low Power
        -
    Low Voltage Operation 2.0V – 3.6V
        -
    90 μA Standby Current (typ.)
        -
    5 μA Sleep Mode Current (typ.)
  • Industry Standard Configurations
        -
    Industrial Temperature -40°C to +85°C
        -
    8-pin “Green”/RoHS SOIC Package

 

Featuring 10 Year Data Retention and Very Fast Serial Peripheral Interface, the 512 K-bit F-RAM V-Family FM25V05-G is offered inan 8-pin “Green”/RoHS SOIC Package.
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10,17 $
USD
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Product Variant Information section