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Product Variant Information section
Product Specification Section
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Stock : 4 090

Sur commande : 0
Stock d'usine :Stock d'usine : 0
Délai d'usine : N/A
Commande minimale : 1
Multiples de : 1
Quantité Prix Internet
1+ $25.39
Total :

25,39 $

USD
Attributs
Attributes Table
Memory Density 4Mb
Interface Type Parallel
Memory Organization 256 K x 16
Supply Voltage-Nom 3V to 3.6V
Access Time-Max 35ns
Temperature Range -40°C to +85°C
Fonctionnalités et applications

The MR2A16ACYS35 is a 4 Mb magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. It is available in 44-pin thin small outline package (TSOP Type 2).

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Features:

  • Fast 35 ns Read/Write Cycle
  • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
  • Unlimited Read & Write Endurance
  • Data Non-volatile for >20 years at Temperature
  • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
  • Replace battery-backed SRAM solutions with MRAM to improve reliability
  • 3.3 Volt Power Supply
  • Automatic Data Protection on Power Loss
  • Commercial, Industrial, Extended Temperatures
  • RoHS-Compliant SRAM TSOP2 and BGA Packages - MSL Level 3
  • AEC-Q100 Grade 1 option

View the available MR2A16A series of MRAMs