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Stock : 225
Sur commande : 0
Stock d'usine :Stock d'usine : 0
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|Memory Organization||512 K x 8|
|Supply Voltage-Nom||3V to 3.6V|
Fonctionnalités et applications
The AS7C34096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns areideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memorysystems. When CE is high the device enters standby mode.
The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chipdrives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3V supply voltage. This device is available as per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.A 4MB 3.3V Fast Asynchronous Alliance product that has a 512K x8 configuration, with commercial temperature range (0°C to 70°C), and a 44-pin TSOP II package. The part supports 10 nanoseconds speeds and is RoHS compliant.