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Product Variant Information section
Product Specification Section
Pricing Section

Stock : 8 000

Sur commande : 0
Stock d'usine :Stock d'usine : 0
Délai d'usine : N/A
Commande minimale : 2 000
Multiples de : 2 000
Quantité Prix Internet
2 000+ $3.44
Total :

6 880,00 $

Attributes Table
Memory Density 2Mb
Memory Organization 256 K x 8
Supply Voltage-Nom 2.2V to 3.6V
Access Time-Max 45ns
Temperature Grade Industrial
Fonctionnalités et applications

The CY62138EV30LL-45BVXI is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.


  • Very high speed: 45 ns
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62138CV30
  • Ultra low standby power
    • Typical standby current: 1 µA
    • Maximum standby current: 7 µA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
    • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Offered in Pb-free 36-ball ball grid array (BGA) package