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Product Variant Information section
Product Specification Section
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Stock : 64

Sur commande :Order inventroy details 544
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1+ $15.78
Total :

15,78 $

USD
Attributs
Attributes Table
Memory Density 8Mb
Memory Organization 512 K x 16
Supply Voltage-Nom 3V to 3.6V
Access Time-Max 10ns
Temperature Grade Industrial
Fonctionnalités et applications

The CY7C1051DV33 is a high performance CMOS Static RAM organized as 512 K words by 16-bits. To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from I/O pins (I/O0–I/O7), is written into the location specified on the address pins (A0–A18). If Byte HIGH Enable(BHE) is LOW, then data from I/O pins  (I/O8–I/O15) is writteninto the location specified on the address pins (A0–A18).

The CY7C1051DV33 is available in a 44-pin TSOP II package with center power and ground (revolutionary) pinout and a 48-ball FBGA package.

Features:

  • Temperature ranges
  • –40 °C to 85 °C
  • High speed
  • tAA = 10 ns
  • Low active power
  • ICC = 110 mA at f = 100 MHz
  • Low CMOS standby power
  • ISB2 = 20 mA
  • 2.0-V data retention
  • Automatic power-down when deselected
  • Transistor-transistor logic (TTL)-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in Pb-free 48-ball fine ball grid array (FBGA) and 44-pin thin small outline package (TSOP) II packages

View the complete CY7C1051DV33 series of Static RAMs