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Référence fabricant


Single 6 A Surface Mount High Speed Low Side SiC Mosfet Driver - QFN-24

Modèle ECAD:
Nom du fabricant: ON Semiconductor
Emballage standard:
Code de date: 1739
Product Specification Section
Caractéristiques techniques
Attributes Table
Configuration: Low Side
No of Outputs: Single
On-state Resistance-Max: 10Ω
Output Current: 12mA
Peak Output Current: 6A
Supply Voltage-Max: 22V
Rated Power Dissipation: 2.9W
Quiescent Current: 6.5mA
Turn-off Delay Time: 50ns
Turn-on Delay Time: 50ns
Rise Time: 8ns
Fall Time: 8ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  QFN-24
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NCP51705 is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn-off, the NCP51705 can utilize its on-board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCP51705 also provides an externally accessible 5V rail to power the secondary side of digital or high speed opto isolators.


  • 6A peak output current
  • User adjustable built-in negative charge pump
  • Adjustable under-voltage lockout
  • Thermal shutdown function
  • Extended positive voltage rating
  • Accessible 5V reference/bias rail for digital oscillator supply
  • Desaturation function
  • Low parasitic inductance QFN-24 package
Pricing Section
Stock globale:
3 000
d’Allemagne (En ligne seulement):
3 000
Sur commande :
Stock d'usine :Stock d'usine :
9 000
Délai d'usine :
10 Semaines
Commande minimale :
Multiples de :
4 350,00 $
Prix Internet
3 000+