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Référence fabricant

NESG2101M05-A

NESG2101 Series 5 V 17 GHz 100 mA RF Germanium Transistor - SOT-343

Nom du fabricant: CEL
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Caractéristiques techniques
Attributes Table
Polarity: NPN
CE Voltage-Max: 5V
Style d'emballage :  SOT-343 (SC-82, SC-70-4)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NESG2101M05-A is an NPN SiGe RF transistor for medium output power amplification, available in flat-lead 4-pin thin type super minimold package.

Features:

  • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high gain amplification
    • PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz
    • NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
  • Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
  • High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
  • Flat-lead 4-pin thin-type super minimold (M05) package

 

 

Pricing Section
Stock:
0
Commande minimale :
120
Multiples de :
120
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
N/A
Total 
93,00 $
USD
Quantité
Prix Internet
120+
$0.775
Product Variant Information section