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  6. IGC033S10S1XTMA1

Infineon | IGC033S10S1XTMA1

Manufacturer Part #

IGC033S10S1XTMA1

GaNFET,100V,76A,2.4MOHM,N-CH,6-PowerVDFN

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2451
Product Specification Section
Infineon IGC033S10S1XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 76A
No of Channels: 1
Qg Gate Charge: 11nC
Drain-to-Source Voltage [Vdss]: 100V
Gate-Source Voltage-Max [Vgss]: 5V
Input Capacitance: 1200pF
Rated Power Dissipation: 3.3W
Operating Temp Range: -40°C to +150°C
Package Style:  TSON-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$7,900.00
USD
Quantity
Unit Price
5,000+
$1.58
Product Variant Information section
Resources, Articles, News & Events
Article
2025-10-16
Infineon — 100 V GaN Transistors

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