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Référence fabricant

HGTG30N60A4D

HGTG30N60A4 Series 600 V 75 A Flange Mount SMPS N-Channel IGBT-TO-247

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 1851
Product Specification Section
Caractéristiques techniques
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 75A
Power Dissipation-Tot: 463W
Turn-on Delay Time: 25ns
Turn-off Delay Time: 150ns
Style d'emballage :  TO-247-3
Méthode de montage : Through Hole
Fonctionnalités et applications

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 °C and 150 °C.

The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.

Features:

  • lt/100 kHz Operation at 390 V, 30 A
  • 200 kHz Operation at 390 V, 18 A
  • 600 V Switching SOA Capability
  • Typical Fall Time. . . . . . . . . . 60 ns at TsubJ/sub = 125& °C
  • Low Conduction Loss
  • Temperature Compensating SABERsup™Model 

Applications:

  • TBA

View the complete HGTG series of IGBTs

Pricing Section
Stock globale:
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
40 Semaines
Commande minimale :
1
Multiples de :
1
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Total 
3,56 $
USD
Quantité
Prix Internet
1+
$3.56
Product Variant Information section