Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
FCA20N60-F109
FCA20N60 Series 600 V 190 mOhm 20 A N-Channel SuperFET® MOSFET - TO-3PN
| | |||||||||||
| | |||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:450 per Tube Package Style:TO-3PN Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
onsemi FCA20N60-F109 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FCA20N60-F109&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fca20n60-f109-onsemi-7256373
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FCA20N60-F109&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fca20n60-f109-onsemi-7256373
onsemi FCA20N60-F109 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.19Ω |
| Rated Power Dissipation: | 208W |
| Qg Gate Charge: | 75nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 62ns |
| Turn-off Delay Time: | 230ns |
| Rise Time: | 140ns |
| Fall Time: | 65ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 2370pF |
| Package Style: | TO-3PN |
| Mounting Method: | Through Hole |
Features & Applications
The FCA20N60_F109 is a FCA20N60 Series 600 V 190 Ohm Through Hole N-Channel MOSFET - TO-3PN package .
The SuperFET® is a new generation high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Product Features:
- 650V @TJ=150°C
- Typ. Rds(on)=0.15Ω
- Fast Recovery Type ( trr = 160ns )
- Ultra low gate charge (typ. Qg=75nC)
- Low effective output capacitance (typ. Coss.eff=165pF)
- 100% avalanche tested
Available Packaging
Package Qty:
450 per Tube
Package Style:
TO-3PN
Mounting Method:
Through Hole