Nexperia GAN063-650WSA Gallium Nitride (GaN) FET
Nexperia has entered the market for Gallium Nitride (GaN) power transistors with the launch of the 650V GAN063-650WSA, a robust device operating with a gate-source voltage of ±20 V and supporting a maximum operating temperature of 175°C.
GaN transistors, a type of wide-bandgap semiconductor, are notable for their very low switching and conduction losses in power-converter circuits. This has led to growing interest in the use of GaN power switches in applications in which efficiency is important, such as electric and hybrid electric vehicle charging and traction systems.
Nexperia’s GAN063-650WSA is ideal for these and many other high-efficiency applications. Its headline efficiency characteristics include:
- Low on-resistance of 60mΩ
- Low reverse-recovery charge to enable fast switching operations
- Body diode with low forward voltage for low losses in reverse conduction mode
Easy to drive, the device may be switched with a gate threshold voltage of +4V, maintaining high immunity to gate bounce.
The GAN063-650WSA is fabricated in Nexperia’s own GaN-on-silicon process, which is robust and mature. Producing devices with proven quality and reliability, this process is scalable to high production volumes, as wafers can be processed in existing silicon fabrication facilities.
The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices which Nexperia is developing.
|View all Issues of FTM|