ON Semiconductor NTD360N80S3Z SUPERFET® III MOSFET
800V power MOSFET ideal as primary switch in flyback converters
ON Semiconductor has introduced the NTD360N80S3Z, an 800V SUPERFET® III MOSFET which is optimized for use as the primary switch in a flyback converter.
The N-channel NTD360N80S3Z MOSFET features low on-resistance of 300mΩ and very low gate charge of 25.3nC. This means that use of this robust and high-performance power switch results in lower switching losses and a lower case temperature, and without sacrificing EMI performance.
In addition, the provision in the NTD360N80S3Z of an internal Zener diode gives a marked increase in resistance to ESD events.
By using this 800V SUPERFET III MOSFET, power-system engineers can realize more efficient, compact, cooler and more robust designs for switching power-conversion applications.
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