Vishay — SIHD690N60E Power MOSFET

600 V power MOSFET offers high conversion efficiency

Attractive combination of low on-resistance and low gate charge

The 600 V SIHD690N60E power MOSFET is in the fourth generation of the Vishay E series technology, which is notable for producing devices which have a combination of low on-resistance and low gate charge.


These E series MOSFETs can be used in power supplies and power converters to achieve low switching and conduction losses and high efficiency.


On-resistance is 0.6 Ω at a gate-source voltage of 10 V. Maximum gate charge is just 12 nC. The maximum gate-source threshold voltage is 5.0 V.


The SIHD690N60E is supplied in a TO-252 DPAK package which has a footprint of 6.0 mm x 6.5 mm, and is 2.3 mm high


  • Low effective capacitance
  • 9 mJ avalanche energy rating
  • Operating-temperature range: -55°C to 150°C
  • 0°C/W maximum junction-to-case thermal resistance


  • Servers
  • Telecoms equipment
  • Switch-mode power supplies
  • Power factor correction circuits
  • Lighting
    • High-intensity discharge
    • Fluorescent ballast
  • Industrial systems
    • Welding equipment
    • Induction heating
    • Motor drives
    • Battery chargers
  • Solar inverters

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