New power MOSFET family offers higher efficiency in switching converters


Infineon StrongIRFET 2 MOSFETs offer lower on-resistance and gate charge than earlier StrongIRFET products

The StrongIRFET™ 2 family of N-channel power MOSFETs from Infineon offers higher efficiency in switching power-conversion applications than the first generation of StrongIRFET devices, while matching the attractive price/performance ratio and broad availability.


The new StrongIRFET 2 technology offers up to 40% lower on-resistance and up to 60% lower gate charge. Increased current ratings allow for higher current-carrying capability, eliminating the need to parallel multiple devices. This results in lower bill-of-materials cost and a smaller board footprint.


The StrongIRFET 2 MOSFETs are suitable for both low and high switching frequencies, and with breakdown-voltage options of 40 V, 60 V, 80 V and 100 V, they fit a broad range of applications.


The new MOSFETs are available now in an industry-standard TO-220 through-hole package. The standard pin-out allows for drop-in replacement of other MOSFETs. Products in the family are also available in TO-220 FullPAK, D2PAK, D2PAK 7-pin, DPAK and TOLL package options.


  • Operating-temperature range: -55°C to 175°C
  • 100% avalanche tested
  • Gate threshold voltage: 2.8 V or 3 V


  • Switch-mode power supplies
  • Power adapters
  • Motor drives
  • Battery-powered applications
  • Battery management systems
  • Uninterruptible power supplies
  • Light electric vehicles
Infineon — StrongIRFET™ 2 Power MOSFETs

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