Power Integrations

Power Integrations SIC1181KQ and SIC1182KQ SCALE-iDriver SiC MOSFET Drivers

Compact isolated SiC MOSFET driver incorporates active clamping and fast short-circuit turn-off

Power Integrations’ 750V SIC1181KQ and 1,200V SIC1182KQ SCALE-iDriver™ products are efficient, single-channel gate drivers for Silicon Carbide (SiC) MOSFETs, for use in automotive applications.

 

AEC-Q100 Grade 1 qualified, these devices can be configured to support the gate-drive voltage requirements of SiC MOSFETs, which are commonly used in automotive applications, and feature sophisticated safety and protection features.

 

The SIC1182KQ and SIC1181KQ provide a rail-to-rail output and offer fast gate-switching speeds to match the high-speed switching capability of SiC MOSFETs. A unipolar supply voltage supports positive and negative output voltages.

 

Important safety features include drain-to-source voltage monitoring, over-current detection for SiC MOSFETs with a current-sense terminal, and primary and secondary under-voltage lock-out. The drivers’ Advanced Active Clamping (AAC) feature facilitates safe operation and soft turn-off under fault conditions. Combined with voltage monitoring, AAC ensures safe turn-off in less than 2µs in short-circuit conditions. The gate-drive control and AAC features allow gate resistance to be minimized, reducing switching losses and maximizing motor inverter efficiency.

 

A particularly important feature of these SCALE-iDriver products is reinforced isolation, backed by the high-speed FluxLink™ communication technology. Compared to optocouplers, capacitive, or isolated magnetic couplers, the SIC118xKQ drivers offer superior isolation capability and a lower component count. The gate drivers also support automotive manufacturers’ functional safety compliance programs: even if a power device causes catastrophic driver failure, the SCALE-iDriver’s isolation remains intact, ensuring that no part of the chassis will carry life-threatening high voltages.

 

The single-channel SIC118xKQ gate drivers provide an output of up to ±8A and are suited to SiC MOSFETs with standard gate-emitter voltages of +15V, with various negative voltages from -3V to -15V.

Features

  • Up to 150kHz switching frequency
  • ±5ns propagation delay jitter
  • Operating temperature range: -40°C to 125°C
  • High common-mode transient immunity
  • 5mm creepage and clearance

Applications

  • Automotive systems
    • Electric and hybrid electric vehicle traction motors
    • Electric vehicle on-board chargers
  • Charging points

Evaluation Board

Board part number: RDHP-1608

 

A general-purpose base board for the SCALE-iDriver SiC MOSFET drivers.

Power Integrations — RDHP-1608

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