The STMicroelectronics STGAP2SICSN is a specialized single-channel gate driver for controlling silicon carbide (SiC) MOSFETs. Supplied in a space-saving, narrow-body SO-8 package, it offers robust operation and high-performance switching.
Featuring galvanic isolation between the gate-driving channel and the low-voltage control signal, the STGAP2SICSN operates at voltages up to 1,700 V on the high-voltage rail. Input-to-output propagation time of less than 75 ns provides for accurate operation of PWM-controlled switching.
High common-mode transient immunity of ±100 V/ns over the entire operating-temperature range helps the power-system designer to maintain highly reliable operation.
Two optional configurations are available, giving a choice of separate outputs which allow turn-on and turn-off times to be independently optimized using an external resistor, or a single output with active Miller clamp function. The single-output configuration enhances stability in high-frequency hard-switching applications, taking advantage of the Miller clamp to prevent excessive oscillation of the power switch’s gate voltage.
The STGAP2SICSN inputs are compatible with CMOS/TTL logic down to 3.3 V, simplifying connection to a host microcontroller or DSP.
The driver can sink and source up to 4 A at a gate-driving voltage up to 26 V. An integrated bootstrap diode simplifies design and enhances reliability. A shut-down mode with a dedicated Input pin helps to minimize system power consumption.
Board Part Number: EVSTGAP2SICSN
The EVSTGAP2SICSN half-bridge board enables evaluation of the STGAP2SICSN when driving a half-bridge power stage with a voltage rating up to 520 V.
Board Part Number: EVSTGAP2SICSNC
The EVSTGAP2SICSNC half-bridge board enables evaluation of the STGAP2SICSN when driving a half-bridge power stage with a voltage rating up to 520 V.