STMicroelectronics — STGAP2SICSN SiC MOSFET Gate Driver

The STMicroelectronics STGAP2SICSN is a specialized single-channel gate driver for controlling silicon carbide (SiC) MOSFETs. Supplied in a space-saving, narrow-body SO-8 package, it offers robust operation and high-performance switching.

Featuring galvanic isolation between the gate-driving channel and the low-voltage control signal, the STGAP2SICSN operates at voltages up to 1,700 V on the high-voltage rail. Input-to-output propagation time of less than 75 ns provides for accurate operation of PWM-controlled switching.

High common-mode transient immunity of ±100 V/ns over the entire operating-temperature range helps the power-system designer to maintain highly reliable operation.

Two optional configurations are available, giving a choice of separate outputs which allow turn-on and turn-off times to be independently optimized using an external resistor, or a single output with active Miller clamp function. The single-output configuration enhances stability in high-frequency hard-switching applications, taking advantage of the Miller clamp to prevent excessive oscillation of the power switch’s gate voltage.

The STGAP2SICSN inputs are compatible with CMOS/TTL logic down to 3.3 V, simplifying connection to a host microcontroller or DSP.

The driver can sink and source up to 4 A at a gate-driving voltage up to 26 V. An integrated bootstrap diode simplifies design and enhances reliability. A shut-down mode with a dedicated Input pin helps to minimize system power consumption.