{"id":17295,"date":"2023-02-16T07:50:00","date_gmt":"2023-02-16T12:50:00","guid":{"rendered":"https:\/\/www.futureelectronics.com\/ftm\/?p=17295"},"modified":"2024-09-19T13:13:38","modified_gmt":"2024-09-19T17:13:38","slug":"stmicroelectronics-mdmesh-m9-mosfets","status":"publish","type":"post","link":"https:\/\/www.futureelectronics.com\/ftm\/embedded-solutions\/stmicroelectronics-mdmesh-m9-mosfets\/","title":{"rendered":"STMicroelectronics \u2014 MDmesh M9 MOSFETs"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-post\" data-elementor-id=\"17295\" class=\"elementor elementor-17295\" data-elementor-post-type=\"post\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-47e68e96 elementor-section-content-middle elementor-section-height-min-height breadcrumbs elementor-hidden-phone elementor-section-boxed elementor-section-height-default elementor-section-items-middle\" data-id=\"47e68e96\" data-element_type=\"section\" 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class=\"elementor-element elementor-element-7997a2eb elementor-widget elementor-widget-heading\" data-id=\"7997a2eb\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">New MOSFET technology gives improved power density and efficiency<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-8f8f790 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"8f8f790\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-66 elementor-top-column elementor-element elementor-element-7fed3d2c\" 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data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">MDmesh M9 MOSFETs from STMicroelectronics suitable for both hard-switching and resonant topologies<\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-1e0b69b7 elementor-widget elementor-widget-text-editor\" data-id=\"1e0b69b7\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>STMicroelectronics has introduced MDmesh M9 superjunction power MOSFETs, offering the industry\u2019s best figure-of-merit for on-resistance x gate charge in its class. Use of the MDmesh M9 devices enables designers to substantially reduce power losses in power systems in communications equipment, microinverters and resonant dc-dc converters.<\/p><p>\u00a0<\/p><p>The MDmesh M9 series sets a new benchmark for 650 V and 600 V superjunction MOSFETs, offering a reduction of around 30% in on-state resistance compared to the previous technology.<\/p><p>This enables developers to increase power density and realize more compact power-system designs based on hard- or soft-switching topologies.<\/p><p>\u00a0<\/p><p>The new product range, which is available in versions for industrial and for automotive applications, also includes 250 V-rated medium voltage MOSFETs.<\/p><p>\u00a0<\/p><p>The first MDmesh M9 device to be launched is the 650 V STP65N045M9, which has maximum on-resistance of 45 m\u2126. On-resistance as a function of area is very low, as is gate charge, which is just\u00a0 80 nC at a 400 V drain voltage.<\/p><p>\u00a0<\/p><p>The MDmesh M9 technology reduces both turn-on and turn-off switching losses compared with the earlier MDmesh M5 technology. The MDmesh M9 MOSFETs also feature very low reverse-recovery charge and reverse-recovery time, helping to improve efficiency and switching performance.<\/p><p>\u00a0<\/p><p>An essential element of the MDmesh M9 technology is an additional platinum diffusion process which produces a fast intrinsic body diode. The peak diode-recovery slope, dV\/dt, is also greater than for earlier processes.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<section class=\"elementor-section elementor-inner-section elementor-element elementor-element-1301b12c elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"1301b12c\" data-element_type=\"section\" data-e-type=\"section\" data-settings=\"{&quot;background_background&quot;:&quot;classic&quot;}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-inner-column elementor-element elementor-element-317e0e88\" data-id=\"317e0e88\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-61346c33 elementor-widget elementor-widget-heading\" data-id=\"61346c33\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Features<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-2e478e3 elementor-widget elementor-widget-text-editor\" data-id=\"2e478e3\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<ul><li>55 A maximum continuous drain current at a case temperature of 25\u00b0C<\/li><li>Handles dV\/dt up to 120 V\/ns and dI\/dt up to 900 A\/\u03bcs<\/li><li>Easy to drive<\/li><li>100% avalanche tested<\/li><li>Operating-temperature range: -55\u00b0C to 150\u00b0C<\/li><\/ul>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-inner-column elementor-element elementor-element-396e2d89\" data-id=\"396e2d89\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-50ae24e3 elementor-widget elementor-widget-heading\" data-id=\"50ae24e3\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Applications<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-589371ca elementor-widget elementor-widget-text-editor\" data-id=\"589371ca\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<ul><li>Servers<\/li><li>Telecoms equipment<\/li><li>5G wireless infrastructure<\/li><li>Microinverters<\/li><li>Fast 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This site is optimized with the Yoast SEO Premium plugin v27.1 (Yoast SEO v28.8) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>STMicroelectronics \u2014 MDmesh M9 MOSFETs &#8211; Future Technology Magazine<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.futureelectronics.com\/ftm\/embedded-solutions\/stmicroelectronics-mdmesh-m9-mosfets\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"STMicroelectronics \u2014 MDmesh M9 MOSFETs\" \/>\n<meta property=\"og:description\" content=\"STMicroelectronics\u2019 MDmesh M9 MOSFETs are suitable for hard-switching and resonant topologies, providing new technology for improved power density efficiency.\" \/>\n<meta property=\"og:url\" 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