{"id":19578,"date":"2023-09-28T10:28:17","date_gmt":"2023-09-28T14:28:17","guid":{"rendered":"https:\/\/www.futureelectronics.com\/ftm\/?p=19578"},"modified":"2023-09-28T10:28:17","modified_gmt":"2023-09-28T14:28:17","slug":"nexperia-thermal-management","status":"publish","type":"post","link":"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/nexperia-thermal-management\/","title":{"rendered":"Nexperia \u2014 Thermal Management"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-post\" data-elementor-id=\"19578\" class=\"elementor elementor-19578\" data-elementor-post-type=\"post\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-5c7967a5 elementor-section-content-middle elementor-section-height-min-height breadcrumbs elementor-hidden-phone elementor-section-boxed elementor-section-height-default elementor-section-items-middle\" data-id=\"5c7967a5\" data-element_type=\"section\" 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href=\"https:\/\/www.futureelectronics.com\/ftm\/\">FTM<\/a><\/span><\/span><\/p>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-7e0a0c0 elementor-section-content-middle elementor-section-height-min-height elementor-section-items-stretch elementor-hidden-desktop elementor-hidden-tablet elementor-section-boxed elementor-section-height-default\" data-id=\"7e0a0c0\" data-element_type=\"section\" data-e-type=\"section\" data-settings=\"{&quot;background_background&quot;:&quot;gradient&quot;}\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-no\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-2acba79 top-category\" data-id=\"2acba79\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-38a79f15 elementor-widget elementor-widget-heading\" data-id=\"38a79f15\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/\" rel=\"tag\">Industrial Robotics &amp; Industry 5.0<\/a><\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-35591515\" data-id=\"35591515\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-67499147 elementor-nav-menu--stretch 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class=\"elementor-item\">Power<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-26045\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/intelligent-sensing\/\" class=\"elementor-item\">Intelligent Sensing<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-4236\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/motor-control\/\" class=\"elementor-item\">Motor\/Motion Control<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-26044\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/security-cra-encryption\/\" class=\"elementor-item\">Security, CRA &amp; Encryption<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-11054\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/embedded-solutions\/\" class=\"elementor-item\">Embedded Solutions<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-8784\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/connectivity\/\" class=\"elementor-item\">Connectivity<\/a><\/li>\n<\/ul>\t\t\t<\/nav>\n\t\t\t\t\t<div class=\"elementor-menu-toggle\" role=\"button\" tabindex=\"0\" aria-label=\"Menu Toggle\" aria-expanded=\"false\">\n\t\t\t<i aria-hidden=\"true\" role=\"presentation\" class=\"elementor-menu-toggle__icon--open eicon-menu-bar\"><\/i><i aria-hidden=\"true\" role=\"presentation\" class=\"elementor-menu-toggle__icon--close eicon-close\"><\/i>\t\t<\/div>\n\t\t\t\t\t<nav class=\"elementor-nav-menu--dropdown elementor-nav-menu__container\" aria-hidden=\"true\">\n\t\t\t\t<ul id=\"menu-2-67499147\" class=\"elementor-nav-menu\"><li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-24641\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/energy-innovation\/\" class=\"elementor-item\" tabindex=\"-1\">Energy Innovation<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-7962\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/\" class=\"elementor-item\" tabindex=\"-1\">Industrial Robotics &amp; Industry 5.0<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-7061\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/ai-edge-solutions\/\" class=\"elementor-item\" tabindex=\"-1\">AI &amp; Edge Solutions<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-26043\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/advanced-mobility\/\" class=\"elementor-item\" tabindex=\"-1\">Advanced Mobility<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-9811\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/power-solutions\/\" class=\"elementor-item\" tabindex=\"-1\">Power<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-26045\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/intelligent-sensing\/\" class=\"elementor-item\" tabindex=\"-1\">Intelligent Sensing<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-4236\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/motor-control\/\" class=\"elementor-item\" tabindex=\"-1\">Motor\/Motion Control<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-26044\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/security-cra-encryption\/\" class=\"elementor-item\" tabindex=\"-1\">Security, CRA &amp; Encryption<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-11054\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/embedded-solutions\/\" class=\"elementor-item\" tabindex=\"-1\">Embedded Solutions<\/a><\/li>\n<li class=\"menu-item menu-item-type-taxonomy menu-item-object-category menu-item-8784\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/connectivity\/\" class=\"elementor-item\" tabindex=\"-1\">Connectivity<\/a><\/li>\n<\/ul>\t\t\t<\/nav>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-2197fd83 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"2197fd83\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-no\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-54d8801b\" data-id=\"54d8801b\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-6d141ad4 elementor-icon-list--layout-inline elementor-align-start header-meta elementor-mobile-align-center elementor-list-item-link-full_width elementor-widget elementor-widget-icon-list\" data-id=\"6d141ad4\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"icon-list.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<ul class=\"elementor-icon-list-items elementor-inline-items\">\n\t\t\t\t\t\t\t<li class=\"elementor-icon-list-item elementor-inline-item\">\n\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-icon-list-text\">September 28, 2023<\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t<li class=\"elementor-icon-list-item elementor-inline-item\">\n\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-icon-list-text\"><a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/\" rel=\"tag\">Industrial Robotics &amp; Industry 5.0<\/a><\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t\t\t<li class=\"elementor-icon-list-item elementor-inline-item\">\n\t\t\t\t\t\t\t\t\t\t<span class=\"elementor-icon-list-text\"><span>Issue 7 2023<\/span><\/span>\n\t\t\t\t\t\t\t\t\t<\/li>\n\t\t\t\t\t\t<\/ul>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-44e22536\" data-id=\"44e22536\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-766f3a2a elementor-widget elementor-widget-post-navigation\" data-id=\"766f3a2a\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"post-navigation.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<div class=\"elementor-post-navigation\" role=\"navigation\" aria-label=\"Post Navigation\">\n\t\t\t<div class=\"elementor-post-navigation__prev elementor-post-navigation__link\">\n\t\t\t\t<a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/te-connectivity-torque-sensors-the-key-to-collaborative-robot-success\/\" rel=\"prev\"><span class=\"post-navigation__arrow-wrapper post-navigation__arrow-prev\"><i aria-hidden=\"true\" class=\"fas fa-angle-left\"><\/i><span class=\"elementor-screen-only\">Prev<\/span><\/span><span class=\"elementor-post-navigation__link__prev\"><span class=\"post-navigation__prev--label\">Previous<\/span><\/span><\/a>\t\t\t<\/div>\n\t\t\t\t\t\t<div class=\"elementor-post-navigation__next elementor-post-navigation__link\">\n\t\t\t\t<a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/power-integrations-bridgeswitch-integrated-half-bridge-motor-driver-ics\/\" rel=\"next\"><span class=\"elementor-post-navigation__link__next\"><span class=\"post-navigation__next--label\">Next<\/span><\/span><span class=\"post-navigation__arrow-wrapper 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elementor-widget elementor-widget-heading\" data-id=\"48b0b68e\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h2 class=\"elementor-heading-title elementor-size-default\">Mastering thermal management: how to keep reverse-biased diodes thermally stable <\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-4ed53715 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"4ed53715\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-66 elementor-top-column elementor-element elementor-element-60082825\" data-id=\"60082825\" data-element_type=\"column\" 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elementor-social-icon-youtube elementor-repeater-item-c794464\" href=\"https:\/\/www.youtube.com\/user\/FutureElec\" target=\"_blank\">\n\t\t\t\t\t\t<span class=\"elementor-screen-only\">Youtube<\/span>\n\t\t\t\t\t\t<i aria-hidden=\"true\" class=\"fab fa-youtube\"><\/i>\t\t\t\t\t<\/a>\n\t\t\t\t<\/span>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<div class=\"elementor-element elementor-element-6f5f0853 elementor-widget elementor-widget-heading\" data-id=\"6f5f0853\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">Nexperia <\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-5d2f67e8 elementor-widget elementor-widget-text-editor\" data-id=\"5d2f67e8\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><b><span data-contrast=\"auto\">Read this to find out about:\u00a0<\/span><\/b><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><ul><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"3\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"1\" data-aria-level=\"1\"><span data-contrast=\"auto\">The risk of thermal runaway when diodes operate in reverse bias<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"3\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"2\" data-aria-level=\"1\"><span data-contrast=\"auto\">The factors which affect a diode\u2019s susceptibility to thermal runaway<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"3\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"3\" data-aria-level=\"1\"><span data-contrast=\"auto\">A comparison of various diode technologies\u2019 thermal stability in reverse-bias conditions<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><\/ul><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Diodes are commonly used in power-conversion applications, in which they are required to operate under reverse bias. The self-heating caused by the leakage current that flows when a diode operates in reverse bias impacts its ability to function safely.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The boundary conditions within which a diode can safely operate are called the safe operating area (SOA). When using a diode in an application, the device must stay within its SOA with a sufficient safety margin to ensure robust and reliable operation. This is especially important in high power-density and high-temperature industrial applications such as uninterruptible power supplies, baseband units, and automation equipment, in which the safety of operators is an important concern.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">This article examines the thermal stability of reverse-biased diodes, and explores the concept of thermal runaway. It also demonstrates how to calculate the SOA of a diode, before discussing the factors which influence the thermal limits of devices in rectifier applications.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><b><span data-contrast=\"auto\">The diode as a thermal system\u00a0<\/span><\/b><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Self-heating caused by leakage current is one of the factors that affect the thermal stability of a diode in reverse bias. It also depends on the diode\u2019s ability to dissipate this heat, measured as the thermal resistance of the system in which it operates. In thermal equilibrium, the junction temperature of a device can be described using the following equation, in which a fixed ambient temperature, Ta, is considered thermal \u2018ground\u2019:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p>\u00a0<\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img decoding=\"async\" class=\"size-medium wp-image-19633 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_1-300x35.jpg\" alt=\"\" width=\"300\" height=\"35\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_1-300x35.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_1-768x91.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_1.jpg 939w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Where R<\/span><span data-contrast=\"auto\">th(j-a)<\/span><span data-contrast=\"auto\"> is the thermal resistance between the junction and the ambient environment, and P<\/span><span data-contrast=\"auto\">dissipated<\/span><span data-contrast=\"auto\"> is the amount of power dissipated in the device.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">A steady-state condition is reached when the two competing processes shown in Figure 1 are in balance:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><ol><li><span data-contrast=\"auto\">The capacity of the thermal system to dissipate heat through the thermal resistance, denoted by the dark green line.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li><span data-contrast=\"auto\">The self-heating of the device generated by reverse leakage current, and potential switching losses, where the level of leakage current increases in line with junction temperature, denoted by the red line.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><\/ol><p>\u00a0<\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img decoding=\"async\" class=\"size-medium wp-image-19603 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-01-269x300.jpg\" alt=\"\" width=\"269\" height=\"300\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-01-269x300.jpg 269w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-01-918x1024.jpg 918w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-01-768x856.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-01.jpg 1200w\" sizes=\"(max-width: 269px) 100vw, 269px\" \/><\/span><\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 1: Steady-state operating conditions that give rise to thermal equilibrium\u00a0<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The blue line, representing dissipated power, intersects the x-axis at the ambient temperature and then rises with a slope proportional to the system\u2019s thermal conductance,1\/Rth. The power generated by the diode\u2019s leakage current, shown by the orange line, rises exponentially with increasing junction temperature. The coordinates of the points of intersection of the two curves mark thermal equilibrium conditions.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The first point of intersection corresponds to a stable thermal equilibrium for the system. Here, as long as the power generated through device self-heating is lower than that dissipated, the junction temperature will decrease and converge toward a thermally stable operating condition.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">If more power is generated than can be dissipated however, which is shown at the higher point of intersection in the graph in Figure 1, the device\u2019s junction temperature will continue to increase, eventually becoming thermally unstable in a process referred to as thermal runaway. As a result, the device will continue to draw more current until it fails due to thermal overstress. Figure 2 shows an x-ray image of a device that has failed due to thermal runaway.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19597 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02-300x120.jpg\" alt=\"\" width=\"300\" height=\"120\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02-300x120.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02-1024x411.jpg 1024w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02-768x308.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02-1536x616.jpg 1536w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-02.jpg 1800w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 2: Device failure due to thermal runaway<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Here, the damage was caused when the fusing current of the bond wire was exceeded. For a clip-bond packaged device, however, thermal overstress would destroy the semiconductor die. The apparent discoloration of the epoxy molding compound shows that the device reached a very high temperature.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The system&#8217;s safety margin is the temperature gap between stable and unstable conditions. As ambient temperature increases, the safety margin shrinks until the stable and unstable equilibrium conditions coincide, at which point the conditions for thermal runaway are satisfied, as shown in Figure 3.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19591 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-03-269x300.jpg\" alt=\"\" width=\"269\" height=\"300\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-03-269x300.jpg 269w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-03-918x1024.jpg 918w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-03-768x856.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-03.jpg 1200w\" sizes=\"(max-width: 269px) 100vw, 269px\" \/><\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 3: Continuously rising ambient temperature lowers the thermal safety margin and increases the risk of thermal runaway.\u00a0\u00a0<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The limits of the thermal runaway condition define the safe operating area of a diode in reverse bias. For a given reverse bias voltage, V<\/span><span data-contrast=\"auto\">R<\/span><span data-contrast=\"auto\">, the corresponding leakage current, I<\/span><span data-contrast=\"auto\">R<\/span><span data-contrast=\"auto\">, is measured over junction temperature. By applying the formula:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p>\u00a0<\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19621 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3-300x36.jpg\" alt=\"\" width=\"300\" height=\"36\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3-300x36.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3-1024x122.jpg 1024w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3-768x92.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3-1536x184.jpg 1536w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_3.jpg 1548w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The temperature limit for thermal runaway can be calculated at each reverse bias point for a given thermal resistance (R<\/span><span data-contrast=\"auto\">th<\/span><span data-contrast=\"auto\">). This equation is illustrated in Figure 4, which shows the maximum thermally stable reverse voltage for a diode based on its junction temperature.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19585 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-04-275x300.jpg\" alt=\"\" width=\"275\" height=\"300\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-04-275x300.jpg 275w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-04-938x1024.jpg 938w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-04-768x838.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-04.jpg 1200w\" sizes=\"(max-width: 275px) 100vw, 275px\" \/><\/span><\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 4: Relationship between maximum reverse voltage and junction temperature of a diode<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">In practice, the SOA graph is used as follows. The required maximum reverse voltage determines the maximum junction temperature for a given application, where a product\u2019s R<\/span><span data-contrast=\"auto\">th(j-a)<\/span><span data-contrast=\"auto\"> is known. The generated power can be calculated by taking into account the leakage current of the device at the given reverse voltage and junction temperature, as stated in the device\u2019s datasheet. The maximum allowable ambient temperature can be easily calculated with this formula:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p>\u00a0<\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19615 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_4-300x26.jpg\" alt=\"\" width=\"300\" height=\"26\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_4-300x26.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_4-1024x87.jpg 1024w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_4-768x65.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_4.jpg 1303w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><b><span data-contrast=\"auto\">How device technology affects SOA<\/span><\/b><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">A diode\u2019s SOA is strongly impacted by thermal resistance according to the following formula:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p>\u00a0<\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\" wp-image-19627 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_2-300x100.jpg\" alt=\"\" width=\"160\" height=\"53\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_2-300x100.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Equation_2.jpg 592w\" sizes=\"(max-width: 160px) 100vw, 160px\" \/><\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Consequently, the SOA can be increased through the use of packages that have a low junction-to-solder-point thermal resistance, or PCBs and substrates with good thermal properties, such as ceramic PCBs.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The semiconductor technology used to construct a diode also impacts its SOA, as the reverse leakage current is responsible for the generated power at a given bias point. When comparing the leakage current of different technologies, it is better to use the current density rather than the actual leakage current. This approach eliminates the impact of die size and enables a like-for-like comparison of different technologies.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Figure 5 shows the relationship between leakage current density and junction temperature for five different diode technologies at a reverse bias voltage of 100 V, including:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><ul><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"1\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"1\" data-aria-level=\"1\"><span data-contrast=\"auto\">100 V low leakage-current planar Schottky<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><\/ul><ul><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"1\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"1\" data-aria-level=\"1\"><span data-contrast=\"auto\">100 V low forward-voltage planar Schottky<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"1\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"2\" data-aria-level=\"1\"><span data-contrast=\"auto\">200 V hyperfast recovery diode<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"1\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"3\" data-aria-level=\"1\"><span data-contrast=\"auto\">120 V silicon germanium (SiGe) diode\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"1\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"4\" data-aria-level=\"1\"><span data-contrast=\"auto\">100 V Trench Schottky diode<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><\/ul><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19645 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-05-300x259.jpg\" alt=\"\" width=\"300\" height=\"259\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-05-300x259.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-05-1024x882.jpg 1024w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-05-768x662.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-05.jpg 1200w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p>\u00a0<\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 5: Leakage current density of five rectifier technologies measured at 100 V<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">This graph can be interpreted as follows:<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><ul><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"2\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"1\" data-aria-level=\"1\"><span data-contrast=\"auto\">As expected, the Schottky diode with low forward voltage (constructed with a low work function metal) exhibits the highest leakage current.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"2\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"2\" data-aria-level=\"1\"><span data-contrast=\"auto\">In contrast, the leakage current density of the low-leakage planar Schottky device is two orders of magnitude lower, demonstrating the exponential impact of barrier height on the leakage current\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"2\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"3\" data-aria-level=\"1\"><span data-contrast=\"auto\">The hyperfast recovery diode also has low leakage-current density<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"2\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"4\" data-aria-level=\"1\"><span data-contrast=\"auto\">Interestingly, the leakage-current density for the novel SiGe diode technology is the same as that of the hyperfast recovery diode.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><li data-leveltext=\"\u25cf\" data-font=\"Calibri\" data-listid=\"2\" data-list-defn-props=\"{&quot;335552541&quot;:1,&quot;335559684&quot;:-2,&quot;335559685&quot;:720,&quot;335559991&quot;:360,&quot;469769242&quot;:[8226],&quot;469777803&quot;:&quot;left&quot;,&quot;469777804&quot;:&quot;\u25cf&quot;,&quot;469777815&quot;:&quot;multilevel&quot;}\" aria-setsize=\"-1\" data-aria-posinset=\"5\" data-aria-level=\"1\"><span data-contrast=\"auto\">The Trench Schottky technology exhibits a higher reverse leakage-current density than the low-leakage planar Schottky, due to its trench construction<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/li><\/ul><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">A decisive factor in determining the thermal stability of a diode in reverse bias is not the actual leakage current but the increase in the rate of leakage current over temperature. To help to understand this better, Figure 6 shows the derivatives of the graphs shown previously in Figure 5 with respect to temperature.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">The exponential nature of the reverse leakage-current density over temperature means these derivative graphs are also exponential and, therefore, linear on a logarithmic scale. Nonetheless, the order of the devices remains the same, with SiGe and hyperfast technologies showing the greatest potential for thermal stability, while the planar Schottky with low forward voltage has the least.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\"> <img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-19639 aligncenter\" src=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-06-300x256.jpg\" alt=\"\" width=\"300\" height=\"256\" srcset=\"https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-06-300x256.jpg 300w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-06-1024x873.jpg 1024w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-06-768x655.jpg 768w, https:\/\/www.futureelectronics.com\/ftm\/wp-content\/uploads\/2023\/09\/TV_Nexperia_Fig-06.jpg 1200w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/span><\/p><p style=\"text-align: center;\"><i><span data-contrast=\"auto\">Fig. 6: Derivative of leakage current density at 100 V reverse bias with respect to junction temperature<\/span><\/i><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><b><span data-contrast=\"auto\">Conclusion<\/span><\/b><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Diodes are commonly used in applications that require them to operate in reverse bias, a condition in which they are sensitive to temperature. Ensuring a diode operates in its SOA requires an understanding of its thermal behavior.\u00a0<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p><p><span data-contrast=\"auto\">Established methods can be used to calculate the SOA of a diode. Measurements show that SiGe technology bridges the gap between hyperfast and Schottky diodes, showing a better trade-off between the leakage current, corresponding to SOA, and forward-voltage drop. SiGe rectifiers show excellent resistance to the surge currents which can occur in industrial applications.<\/span><span data-ccp-props=\"{&quot;201341983&quot;:0,&quot;335559740&quot;:276}\">\u00a0<\/span><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-5832701c elementor-hidden-desktop elementor-hidden-tablet elementor-widget elementor-widget-post-navigation\" data-id=\"5832701c\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"post-navigation.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<div class=\"elementor-post-navigation\" role=\"navigation\" aria-label=\"Post Navigation\">\n\t\t\t<div class=\"elementor-post-navigation__prev elementor-post-navigation__link\">\n\t\t\t\t<a href=\"https:\/\/www.futureelectronics.com\/ftm\/industrial-robotics-industry-5-0\/te-connectivity-torque-sensors-the-key-to-collaborative-robot-success\/\" rel=\"prev\"><span 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