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  6. NP82N055PUG-E1-AY

Renesas | NP82N055PUG-E1-AY

Manufacturer Part #

NP82N055PUG-E1-AY

NP82N055PUG Series N-Channel 55 V 5.2 mOhm 106 nC Switching MosFet - TO-263

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Renesas NP82N055PUG-E1-AY - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 5.2mΩ
Rated Power Dissipation: 143|W
Qg Gate Charge: 106nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The NP82N055PUG-E1-AY is a part of NP82N055PUG series N-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.

This N-channel MOS Field Effect Transistor is designed for high current switching applications.

Features:

  • Channel temperature 175 degree rating
  • Super low on-state resistance
    • RDS(on) = 5.2 mO MAX. (VGS = 10 V, ID = 41 A)
  • Low C iss= C iss = 6400 pF TYP

View the NP82 Series of N-Channel Power Mosfets

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1600
Multiple Of:
800
Total
$2,432.00
USD
Quantity
Unit Price
800
$1.53
1,600
$1.52
2,400
$1.51
4,000+
$1.49
Product Variant Information section