Exagan was founded by Frédéric Dupont and Fabrice Letertre, who together accrued more than 30 years of semiconductor industry experience at Soitec, a global leader in advanced materials. After many years of conducting R&D in gallium nitride (GaN) and convinced that GaN will be a key driver for device performance, they committed to draw upon an existing GaN material technology to develop the ultimate GaN power-device solution, with the goal of accelerating large-scale adoption of this “electrical converter booster” technology in 200-mm semiconductor manufacturing.
Backed by Soitec and CEA-Leti, a leading European research center focused on micro- and nanotechnologies, the founders launched Exagan as a spin-off company in April 2014.