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Manufacturer Part #

MR4A16BCYS35

MR4A16B Series 16 Mb (1 M x 16) 3.6 V 35 ns Asynchronous MRAM Memory - TSOP2-54

Product Specification Section
Technical Attributes
Attributes Table
Memory Density: 16Mb
Interface Type: Parallel
Memory Organization: 1 M x 16
Supply Voltage-Nom: 3V to 3.6V
Access Time-Max: 35ns
Temperature Range: -40°C to +85°C
Package Style:  TSOP II-54
Mounting Method: Surface Mount
Features & Applications

The MR4A16BCYS35 is a magneto resistive random access memory (MRAM) organized as 1,048,576 words of 16 bits.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. It is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.

Features:

  • +3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Unlimited read & write endurance
  • Data always non-volatile for >20 years at temperature
  • RoHS-compliant small footprint BGA and TSOP2 package
  • AEC-Q100 Grade 1 option in TSOP2 package

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
  • Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs

Pricing Section
Stock:
3
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$34.79
USD
Quantity
Web Price
1
$34.79
4
$32.14
15
$29.81
25
$28.95
50+
$27.83